Method of detecting misalignment of ion implantation area

ABSTRACT

A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure relates to a method of detecting the misalignmentof ion implantation areas of a semiconductor device and, moreparticularly, to a method of determining the misalignment of ionimplantation areas immediately after an ion implantation process iscompleted.

2. Background of the Related Art

A complementary metal oxide semiconductor (hereinafter referred to as“CMOS”) device comprises an N-MOS transistor and a P-MOS transistorwhich are formed within the same semiconductor substrate. Either N-MOStransistor or P-MOS transistor must be formed on an impurity regionwhich has a different conduction type from that of substrate in order toseparate electrically the N-MOS transistor from the P-MOS transistor onthe semiconductor substrate. Particularly, the impurity region is calleda well.

The well is generally created through a dopant ion implantation process,a lengthy thermal treatment process at a high temperature, and adiffusion process to diffuse the implanted dopant to an appropriatedepth. This well is particularly known as a diffusion well. In additionto the diffusion well, various well structures have been developed tosimplify a well formation process and to improve well functions. Forexample, a retrograde well is made by performing a high-energy ionimplantation process to locate dopants at an appropriate depth after adevice isolation structure is formed on a silicon substrate.

In making those well structures, it is very important to implant exactlyn-type and p-type dopants into predetermined places within a siliconsubstrate and to align precisely n-type and p-type wells. If infabricating a CMOS device the n-type and p-type wells are misaligned onthe silicon substrate, devices such as transistors and capacitors, whichare formed on the silicon substrate based on the p-type and n-typewells, may not properly function due to several problems such as leakagecurrent.

A conventional well formation process is described to illustrateexamples of misalignment of ion implantation areas. FIGS. 1 a through 1c show, in cross-sectional views, a known process of forming n-type andp-type wells.

Referring to FIG. 1 a, first, device isolation structures 102 are formedon a p-type semiconductor substrate 101 by a local oxidation of silicon(hereinafter referred to as “LOCOS”) or a shallow trench isolation(hereinafter referred to as “STI”) process so as to define activeregions and field regions of a semiconductor device. A first ion implantmask 103 is then formed over the semiconductor substrate 101 by usingphotoresist. The first ion implant mask 103 exposes the some activeregions of the semiconductor substrate on which a p-type well will beformed.

Referring to FIG. 1 b, a p-type ion implantation process is performedfor the semiconductor substrate 101, thereby forming a p-type ionimplant layer 104 with a predetermined depth on the silicon substrate.

Referring to FIG. 1 c, the first ion implant mask 103 is removed. Next,a photoresist layer is deposited over the semiconductor substrate 101and a second ion implant mask 105 is patterned through exposure anddevelopment processes. The second ion implant mask 105 exposes otheractive regions on which an n-type well will be formed. An n-type ionimplantation process is then performed for the semiconductor substrate101, thereby forming an n-type ion implant layer 106 with apredetermined depth on the semiconductor substrate.

A thermal treatment process is then performed for the resultingsubstrate having n-type and p-type ion implant layers so that the ionsin the n-type and p-type ion implant layers are diffused into thesemiconductor substrate to complete n-type and p-type wells.

In the conventional well formation process, to form n-type and p-typewells ion implant masks are required. Each ion implant mask must beexactly positioned over the predetermined region of either an n-type ora p-type well. If the ion implant mask is misaligned, n-type or p-typeimpurity ions may not be implanted into the predetermined region.

Such misalignment may occur during an ion implantation process to definesource/drain regions. For example, a device isolation structure isformed on a semiconductor substrate to define an active region. A gateelectrode pattern is then formed on a predetermined position within theactive region. And an n-type or p-type ion implantation process iscarried out over the semiconductor substrate having the gate electrodepattern. Here, the ions implanted into a source/drain region within afirst active region may have a different conduction type from the ionsimplanted into a source/drain region within a second active regionadjacent to the first active region. For example, the ions implantedinto a source/drain region within the first active region may be firstconduction type impurity ions and, on the other hand, the ions implantedinto a source/drain region within the second active region adjacent tothe first active region may be second conduction type impurity ions. Toform source/drain regions by implanting selectively the first and secondconduction type ions into a plurality of active regions divided bydevice isolation structures, predetermined ion implant masks arerequired. Accordingly, misalignment may occur during ion implantationprocesses as stated in the above well formation process.

The misalignment in making source/drain regions is described in moredetail referring to FIGS. 2 a through 2 i.

Referring to FIG. 2 a, device isolation structures 202 are formed on asemiconductor substrate 201 to define a plurality of active regions.Next, n-type and p-type impurity ions are selectively implanted to format least one source/drain region within each active region. Here, inorder to implant specific conduction type ions only into a predeterminedregion, an ion implant mask with an appropriate pattern must be used sothat regions in which opposite conduction type ions will be implantedcan be protected. FIG. 2 a illustrates, in a cross-sectional view, anion implant configuration without misalignment due to correctdisposition of the ion implant mask.

FIG. 2 b illustrates, in a cross-sectional view, an example of amisaligned ion implant configuration. In FIG. 2 b, each ion implant maskto implant n-type and p-type ions leaned to the right from a normallocation before ion implantation processes were performed. In this case,if the semiconductor substrate is a p-type, there is no problem.However, if the semiconductor substrate is an n-type, leakage currentmay occur.

FIG. 2 c shows, in a cross-sectional view, another example of amisaligned ion implant configuration. In FIG. 2 c, an n-type ion implantmask leaned to the right and a p-type implant mask leaned to the leftbefore ion implantation processes were performed. Both n-type impuritiesand p-type impurities were implanted into some areas on both sides ofthe device isolation area. In this case, if the silicon substrate is ann-type, leakage current occurs. If the silicon substrate is a p-type, alittle leakage current may occur.

FIG. 2 d illustrates, in a cross-sectional view, a third example of amisaligned ion implant configuration. In FIG. 2 d, an n-type ion implantmask leaned to the left and a p-type ion implant mask leaned to theright before ion implantation processes were performed. In this case,leakage current will necessarily occur regardless of the conduction typeof the silicon substrate.

FIGS. 2 e through 2 i also show, in cross-sectional views, otherexamples of misaligned ion implant configurations that may be occurredduring the source/drain region formation. The misalignments illustratedin FIGS. 2 a through 2 i, may also appear during the well formationprocess.

In fabricating a CMOS device, the processes for forming wells andsource/drain regions are carried out relatively at early stages duringsemiconductor fabrication. Therefore, if defects occur during the wellor source/drain region formation and the later processes are performedwithout detection of the defects, the resulting devices will bedefective whether the later processes are done with or without defects.

Semiconductor manufacturing generally comprises a fabrication process,an assembly process, and a test process. So, the defects of asemiconductor device with misaligned wells or source/drain regions aredetected during the final test for the semiconductor device. As aresult, to perform later processes and tests for the semiconductordevice with defects due to misalignment of ion implantation areas may bea waste of time and increase production costs.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a method of detectingmisalignment of ion implantation areas that substantially obviates oneor more problems due to limitations and disadvantages of the relatedart.

An object of the present invention is to provide a method of detectingwhether misalignment of ion implantation areas has occurred, immediatelyafter completion of an ion implantation process.

Additional advantages, objects, and features of the invention will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of theinvention. The objectives and other advantages of the invention may berealized and attained by the structure particularly pointed out in thewritten description and claims hereof as well as the appended drawings.

To achieve this object and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described herein, thepresent invention provides a method of detecting misalignment of ionimplantation areas, comprising forming a misalignment inspection patternon a semiconductor substrate, wherein the misalignment inspectionpattern have a first area and a second area, implanting first and secondconduction type impurity ions into the misalignment inspection patternand active regions on the semiconductor substrate, respectively,measuring a resistance of the misalignment inspection pattern, anddetecting misalignment of ion implantation areas through comparing theresistance of the misalignment pattern with a reference resistance,wherein the reference resistance is made by measuring the resistance ofthe misalignment pattern in various misalignment case of the ionimplantation areas.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIGS. 1 a through 1 c illustrate, in cross-sectional views, a knownprocess of forming n-type and p-type wells;

FIGS. 2 a through 2 i show, in cross-sectional views, examples of ionimplantation configurations that may be occurred during a source/drainformation process;

FIGS. 3 a through 3 e illustrate, in cross-sectional views, steps of awell formation process to describe a method of detecting misalignment ofion implantation areas according to the present invention; and

FIGS. 4 a through 4 i show, in cross-sectional views, standard patternsfor use in measuring various types of resistance, which are employed todetect misalignment of ion implantation areas.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In fabricating semiconductor devices, each unit process is not performedonly for one chip. Rather, the semiconductor devices are manufactured bya mass-production system that the same process is applied to a largeamount of chips in a lump. The present invention takes advantage offeatures of such a process production.

In more detail, there are a plurality of unit chip regions on a singlecrystal silicon substrate. These unit chip regions are separated byscribe lines which are crossed vertically and horizontally at prescribedintervals on the silicon substrate. The scribe lines are cutting areasto saw off each unit chip on the single crystal silicon substrate aftercompletion of the fabrication process.

As mentioned above, there are a plurality of unit chips on asemiconductor substrate and each process for fabricating a semiconductordevice is simultaneously applied to all the unit chips. For example, thesteps of depositing and patterning a material layer to form apredetermined pattern on a semiconductor substrate are carried out forall the unit chips on the semiconductor substrate at the same time. Anion implantation process is simultaneously applied to all the unit chipson the semiconductor substrate as well.

On the basis of such a premise, an ion implantation process is describedin more detail. The ion implantation is carried out at various processstages, for example, well and source/drain formation processes, duringsemiconductor device fabrication. The ion implantation is fundamentallyassociated with an electric current mechanism on a semiconductor. Toapply an electric current to a semiconductor, some impurities have to beimplanted into a substrate. The semiconductor substrate is classified asan n-type or a p-type according to the type of impurities implanted.Therefore, the ion implantation is classified as an n-type impurity ionimplantation or a p-type impurity ion implantation.

On the other hand, a unit chip comprises a plurality of active regionson which elements such as transistors and capacitors are formed, and aplurality of field regions by which the active regions are divided.Practically, the semiconductor device fabrication processes are carriedout only for the active regions. Precisely speaking, the enbloc processto a plurality of unit chips is performed for the plurality of activeregions within each unit chip.

For example, in case of an ion implantation process, either n-type orp-type impurity ion implantation is selectively applied according tocharacteristics of device to be formed on each active region. Thus, theactive regions are divided into n-type impurity implant areas and p-typeimpurity implant areas. The n-type impurity ions and p-type impuritiesions are selectively implanted into each active region.

To implant selectively the n-type impurity ions and p-type impurityions, for example, while an n-type impurity ion implantation isperformed, the p-type impurity ion areas should be protected from then-type ion implantation by an appropriate protection layer. Aphotoresist pattern is generally used as the protection layer.

The photoresist layer is deposited over the semiconductor substrate by acoating equipment and a necessary photoresist pattern is then formedthrough a known photolithography process. The photolithography processcomprises an exposure process that subjects the photoresist layer tolight or other radiant energy, a development process that develops theexposed photoresist layer, and a removing process that removes exposedor unexposed areas of the photoresist layer to make the necessaryphotoresist pattern. In the exposure process, a reticle is used toexpose some parts of the photoresist layer to light. The reticle is avery flat glass plate that contains the patterns to be reproduced on awafer.

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

Referring to FIG. 3 a, a semiconductor substrate 301 on which aplurality of unit chip regions are defined by scribe line regions isprovided. The semiconductor substrate 301 may be a single crystalsilicon substrate with a first conduction type. The first conductiontype may be an n-type or a p-type. At least one device isolationstructure 302 is formed on the first conduction type semiconductorsubstrate 301 by either a LOCOS or an STI process. Thus, a plurality ofactive regions are defined within the device regions divided by thescribe line regions.

Referring to FIG. 3 b, a photoresist layer is deposited over thesemiconductor substrate to make an ion implant mask to implantselectively first or second conduction type impurity ions. In addition,a misalignment inspection pattern 303 with a predetermined shape andlength is formed within a predetermined area on the semiconductorsubstrate, such as a scribe line region. The misalignment inspectionpattern 303 is made of the same material with the semiconductorsubstrate 301 before the photoresist is deposited over the semiconductorsubstrate. In more detail, the misalignment inspection pattern 303 maybe formed before the formation of the device isolation structure orbetween the deposition of the photoresist layer and the formation of thedevice isolation structure. Therefore, the misalignment inspectionpattern 303 is also coated with the photoresist layer.

Next, a photolithography process is performed for the photoresist layerto form photoresist patterns as ion implant masks. Through thephotolithography process, a first ion implant mask 304 is formed overthe device region and a third ion implant mask 305 is formed over themisalignment inspection pattern 303 on the scribe line region. The firstion implant mask 304 exposes a first active region on which a firstconduction type well is formed. The third ion implant mask 305 exposes apredetermined area of the misalignment inspection pattern 303, i.e., afirst area. The ion implant masks 304 and 305 are simultaneously formedin the same shape within a plurality of active regions and a pluralityof unit chips by using the reticle.

Referring to FIG. 3 c, a first conduction type ion implantation processis performed by using the first and third ion implant masks 304 and 305.First conduction type impurity ions, for example, n-type impurity ions,are implanted into the semiconductor substrate having the scribe lineregions. Accordingly, a first ion implantation area 306 with firstconduction type impurity ions is formed on the device region exposed bythe first ion implant mask 304, i.e., the first active region. Inaddition, a third ion implantation area 307 with first conduction typeimpurity ions is formed on the first area of the misalignment inspectionpattern 303. The first and third ion implant masks 304 and 305 are thenremoved by using an ashing process.

Referring to FIG. 3 d, another photoresist layer is deposited over thesemiconductor substrate 301 to make other ion implant masks to implantsecond conduction type impurity ions. A photolithography process isperformed for the photoresist layer to make photoresist patterns as ionimplant masks. Here, a second ion implant mask 308 and a fourth ionimplant mask 309 are formed. The second ion implant mask 308 exposes asecond active region of the device region on which a second conductiontype well is formed. The fourth ion implant mask 309 exposes a secondarea of the misalignment inspection pattern 303 on which secondconduction type impurity ions are implanted.

Next, a second conduction type impurity ion implantation process isperformed for the semiconductor substrate by using the second and fourthion implant masks 308 and 309. As a result, a second ion implantationarea 310 is formed on the second active region, and a fourth ionimplantation area 311 is formed on the second area of the misalignmentinspection pattern 303.

Referring to FIG. 3 e, the second and fourth ion implant masks areremoved by using an ashing process. An annealing process is thenperformed for the resulting structure to diffuse the implanted first andsecond type impurity ions into each region. As a result, a firstconduction type well and a second conduction type well are formed on thedevice region. Here, the first and second conduction type impurity ionsimplanted into the misalignment inspection pattern 303 are also diffusedat the sane time.

According to the above-mentioned process steps, the ion implantation iscompleted. Now, whether or not the first and second conduction typewells have correctly been aligned has to be inspected.

The present invention forms the misalignment inspection pattern on thescribe line region and performs the same ion implantation process forthe misalignment inspection pattern and the device region at the sametime in order to determine whether or not the first and secondconduction type wells have correctly been aligned.

On the other hand, in a semiconductor device fabrication process,particularly, a photolithography process, an exposure using a reticle isessential to make a necessary photoresist pattern. The pattern on thereticle comprises the same repeated images and, therefore, making aphotoresist pattern over the semiconductor substrate is influenced by alocation and an alignment of the reticle. If the reticle leans toward aparticular direction from a correct location and the photolithographyprocess is performed, the photoresist pattern formed on thesemiconductor substrate is also misaligned according to the degree ofmisalignment of the reticle. This is one of the enbloc processcharacteristics of semiconductor device fabrication.

The present invention takes advantage of such an enbloc processcharacteristic of semiconductor device fabrication. In more detail, thepresent invention stands on a basis of an assumption that if first andsecond conduction type wells in a device region were misaligned,impurity ion regions on a misalignment inspection pattern within ascribe line region must have been misaligned.

To describe an embodiment of the present invention, the above-mentionedeight examples of misalignment are considered in more detail. The eightmisalignment examples represent possible deviations of an ionimplantation area from a predetermined region due to the misalignment ofion implant masks. The eight misalignments and one correct alignment area number of cases which can occur during the ion implantation process.In these nine cases, each ion implant configuration represents acharacteristic resistance according to the type of ion implanted and theion implantation area formed. The present invention takes advantage ofthe different resistance between the nine misalignment cases.

Prior to performance of ion implantation process for the misalignmentinspection pattern and the active regions of the semiconductorsubstrate, the necessary basic information has to be established todetermine whether or not an ion implantation area is misaligned. Here,the basic information preferably means the resistance values in the ninecases.

To obtain the resistance values for the nine cases, the following methodis conducted. Referring to FIG. 4 a, a standard pattern 402 with apredetermined configuration is formed on a semiconductor substrate 401.The standard pattern 402 is made of the same material with thesemiconductor substrate 401, preferably, single crystal silicon orpolysilicon. To form the standard pattern 402, a single crystal siliconor polysilicon layer is deposited over the semiconductor substrate bymeans of chemical vapor deposition or physical vapor deposition. Somepart of the deposited silicon layer is then selectively removed to formthe standard pattern 402. The standard pattern 402 has the sameconfiguration with the misalignment inspection pattern and is made ofthe same material with the misalignment inspection pattern. The standardpattern is divided into a first area and a second area like themisalignment inspection pattern. Next, ion implantation processes arecarried out for the standard pattern 402. If ion implant masks arecorrectly aligned, first conduction type impurity ions (for example,n-type ions) are implanted into the first area and second conductiontype impurity ions (for example, p-type ions) are implanted into thesecond area.

FIGS. 4 a through 4 i illustrate, in cross-sectional views, the standardpatterns having various ion implant configurations.

Referring to FIG. 4 a, n-type ions are implanted into the first area ofthe standard pattern 402. P-type ions are implanted into the second areaof the standard pattern 402.

Referring to FIG. 4 b, n-type ions are implanted into the whole firstarea and some part of the second area. P-type ions are implanted intothe rest part of the second area.

Referring to FIG. 4 c, n-type ions are implanted into the whole firstarea and some part of the second area. P-type ions are implanted intothe whole second area and some part of the first area.

Referring to FIG. 4 d, n-type ions are implanted into some part of thefirst area. P-type ions are implanted into some part of the second area.

Referring to FIG. 4 e, n-type ions are implanted into some part of thefirst area. P-type ions are implanted into the second area and the restpart of the first area.

Referring to FIG. 4 f, n-type ions are implanted into the whole firstarea. P-type ions are implanted into some part of the second area.

Referring to FIG. 4 g, n-type ions are implanted into the whole firstarea. P-type ions are implanted into the whole second area and some partof the first area.

Referring to FIG. 4 h, n-type ions are implanted into the whole firstarea and some part of the second area. P-type ions are implanted intothe whole second area.

Referring to FIG. 4 i, n-type ions are implanted into some part of thefirst area. P-type ions are implanted into the whole second area.

Subsequently, an annealing process is performed for each standardpattern with the ion implantation areas. Resistance of each standardpattern is then measured.

More cases of misalignment may be made although the present inventionprovides eight cases of misalignment of ion implant masks. For example,in each case of the presented misalignments, more various misalignmentconfigurations can be conceived by diversifying deviation of the ionimplant mask.

By measuring the resistance values for the nine cases, it is possible todetect whether the ion implantation area is misaligned or not. Inaddition, if an ion implantation area was misaligned, the degree anddirection of deviation of the ion implant mask can be calculated. Indetail, resistance of a misalignment inspection pattern on a scribe lineregion is measured and the measured resistance is compared to theresistances for the nine cases of standard patterns.

The method of detecting misalignment of ion implantation areas can beapplied to a source/drain formation process as well as a well formationprocess. As mentioned above, there are a plurality of unit chips on asemiconductor substrate and there are a plurality of active regionswithin each unit chip. Particular conduction type impurity ions areimplanted into the active regions to form source/drain regions. Theactive regions are classified as a first active region in which firstconduction type impurity ions are implanted, and a second active regionin which second conduction type impurity ions are implanted. Theparticular conduction type ions are implanted by using an appropriateion implant mask. Therefore, misalignment of ion implantation areas mayoccur due to misalignment of the ion implant masks like the wellformation process. Such misalignment can also be detected through themisalignment detection method according to present invention.

The foregoing embodiments are merely exemplary and are not to beconstrued as limiting the present invention. The present teachings canbe readily applied to other types of apparatuses. The description of thepresent invention is intended to be illustrative, and not to limit thescope of the claims. Many alternatives, modifications, and variationswill be apparent to those skilled in the art.

1. A method of detecting misalignment of ion implantation areascomprising: forming a misalignment inspection pattern on a semiconductorsubstrate, wherein the misalignment inspection pattern have a first areaand a second area; implanting first and second conduction type impurityions into the misalignment inspection pattern and active regions on thesemiconductor substrate, respectively; measuring a resistance of themisalignment inspection pattern; and detecting misalignment of ionimplantation areas through comparing the resistance of the misalignmentpattern with a reference resistance, wherein the reference resistance ismade by measuring the resistance of the misalignment pattern in variousmisalignment case of the ion implantation areas.
 2. A method as definedby claim 1, wherein the center of the misalignment inspection pattern isa boundary between the first area and the second area.
 3. A method asdefined by claim 1, wherein the misalignment case of the ionimplantation areas is made by implanting the first conduction typeimpurity ions into the whole first area of the misalignment inspectionpattern and then implanting the second conduction type impurity ionsinto the whole second area of the misalignment inspection pattern.
 4. Amethod as defined by claim 1, wherein the misalignment case of the ionimplantation areas is made by implanting the first conduction typeimpurity ions into the whole first area and some part of the second areaof the misalignment inspection pattern and then implanting the secondconduction type impurity ions into the rest part of the second area ofthe misalignment inspection pattern.
 5. A method as defined by claim 1,wherein the misalignment case of the ion implantation areas is made byimplanting the first conduction type impurity ions into the whole firstarea and some part of the second area of the misalignment inspectionpattern and then implanting the second conduction type impurity ionsinto the whole second area and some part of the first area of themisalignment inspection pattern.
 6. A method as defined by claim 1,wherein the misalignment case of the ion implantation areas is made byimplanting the first conduction type impurity ions into some part of thefirst area of the misalignment inspection pattern and then implantingthe second conduction type impurity ions into some part of the secondarea of the misalignment inspection pattern.
 7. A method as defined byclaim 1, wherein the misalignment case of the ion implantation areas ismade by implanting the first conduction type impurity ions into somepart of the first area of the misalignment inspection pattern and thenimplanting the second conduction type impurity ions into the rest partof the first area and the whole second area of the misalignmentinspection pattern.
 8. A method as defined by claim 1, wherein themisalignment case of the ion implantation areas is made by implantingthe first conduction type impurity ions into the whole first area of themisalignment inspection pattern and then implanting the secondconduction type impurity ions into some part of the second area of themisalignment inspection pattern.
 9. A method as defined by claim 1,wherein the misalignment case of the ion implantation areas is made byimplanting the first conduction type impurity ions into the whole firstarea of the misalignment inspection pattern and then implanting thesecond conduction type impurity ions into some part of the first areaand the whole second area of the misalignment inspection pattern.
 10. Amethod as defined by claim 1, wherein the misalignment case of the ionimplantation areas is made by implanting the first conduction typeimpurity ions into the whole first area and some part of the second areaof the misalignment inspection pattern and then implanting the secondconduction type impurity ions into the whole second area of themisalignment inspection pattern.
 11. A method as defined by claim 1,wherein the misalignment case of the ion implantation areas is made byimplanting the first conduction type impurity ions into some part of thefirst area of the misalignment inspection pattern and then implantingthe second conduction type impurity ions into the whole second area ofthe misalignment inspection pattern.
 12. A method as defined by claim 1,wherein the first conduction type impurity ions are an n-type if thesecond conduction type impurity ions are a p-type, and the firstconduction type impurity ions are a p-type if the second conductionimpurity ions are an n-type.
 13. A method as defined by claim 1, whereinthe active regions are classified as a first active region in whichfirst conduction type impurity ions are implanted and a second activeregion in which second conduction type impurity ions are implanted, andwherein implanting impurity ions into the active regions and themisalignment inspection pattern comprises implanting the firstconduction type impurity ions into the first active region and the firstarea of the misalignment inspection pattern and, then, implanting thesecond conduction type impurity ions into the second active region andthe second area of the misalignment inspection pattern.
 14. A method asdefined by claim 1, wherein implanting impurity ions into the activeregions on the semiconductor substrate is an ion implantation processfor forming wells or source/drain regions.
 15. A method as defined byclaim 1, wherein the misalignment inspection pattern is made of the samematerial with the semiconductor substrate.
 16. A method as defined byclaim 1, wherein the misalignment inspection pattern is formed on ascribe line region within the semiconductor substrate.